![]() ![]() Large-area, transparent, and flexible infrared photodetector fabricated using p-n junctions formed by n-doping chemical vapor deposition grown graphene. ![]() Controllable p-n junction formation in monolayer graphene using electrostatic substrate engineering. Synthesis of sulfur-doped p-type graphene by annealing with hydrogen sulfide. Effect of Au 2Cl 6 doping on stability and work function of graphene. Stable, efficient p-type doping of graphene by nitric acid. Phys Rev B, 2019, 100: 041401ĭ’Arsie L, Esconjauregui S, Weatherup R S, et al. Imaging Dirac fermions flow through a circular Veselago lens. Phys Rev Lett, 2016, 117: 016804īrun B, Moreau N, Somanchi S, et al. Inhibiting Klein tunneling in a graphene p-n junction without an external magnetic field. Photoresponse of an electrically tunable ambipolar graphene infrared thermocouple. Building graphene p-n junctions for next-generation photodetection. Recent advances in graphene homogeneous p-n junction for optoelectronics. Direct laser writing of air-stable p-n junctions in graphene. Gate-activated photoresponse in a graphene p-n junction. Lemme M C, Koppens F H L, Falk A L, et al. Multiple-junction quantum cascade photodetectors for thermophotovoltaic energy conversion. InAsSb-based XB nn bariodes grown by molecular beam epitaxy on GaAs. Large-area synthesis of high-quality and uniform graphene films on copper foils. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Graphene photodetectors for high-speed optical communications. Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides. High-responsivity graphene/silicon-heterostructure waveguide photodetectors. Graphene photodetectors with ultra-broadband and high responsivity at room temperature. Broadband high photoresponse from pure monolayer graphene photodetector. Approaching ballistic transport in suspended graphene. Generation of photovoltage in graphene on a femtosecond timescale through efficient carrier heating. Tielrooij K J, Piatkowski L, Massicotte M, et al. Our results suggest intriguing potential of graphene in-plane p-n-p junctions for applications in high-performance IR photodetectors. The excellent IR photodetection capabilities could be attributed to the synergistic effects of in-plane photovoltaic effects as well as the photogating effects induced carrier injection from the silicon substrate. The devices with p-n-p junctions exhibit excellent photoresponse to 1.0∼4.0 µm IR light illumination with ultra-low dark current at the order of ∼10 −9 A in double p-n-p junctions and 10 −13 A in three p-n-p junctions based photodetector, which is three and seven orders of magnitude lower than pristine graphene phototransistors, respectively. In this study, we develop an efficient graphene in-plane homogeneous p-n-p junction based infrared (IR) photodetector with greatly reduced dark current. Graphene-based photodetectors have drawn a large amount of interests owing to its wide spectral response, however, the high dark current greatly limits their applications.
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